We have studied iron segregation in Czochralski-grown InP as a functio
n of the pulling and cooling rates, We observed that the Fe-active/Fe-
total ratio can be modified by varying these growth parameters. The ac
tivation ratio, which is normally between 0.60 and 0.70 for pulling ra
tes of 8-10 mm/h, is found to be slightly higher corresponding to low
pulling rates (2-3 mm/h) and considerably lower for pulling rates > 14
mm/h. Furthermore, we observed that the electrical properties and waf
er uniformity are improved in crystals pulled at the lowest rates. The
experimental results are discussed considering that low pulling and c
ooling rates correspond to an in situ annealing of the InP crystal. Th
e principal aim of this work is that of increasing the fraction of ele
ctrically active Fe atoms in InP crystals grown by the liquid encapsul
ation Czochralski method.