GROWTH BY OMVPE AND X-RAY-ANALYSIS OF ZNTE AND ZNTE ZNSE EPILAYERS ONIII-V SUBSTRATES/

II-VI compounds are promising materials for optoelectronic application s. They are characterized by a large bandgap in the visible region, wh ich allows the production of lasers and light emitting diodes in the b lue region as the zinc telluride gap at room temperature is 2.26 eV. W e studied the epitaxial growth of zinc telluride and zinc selenide epi layers on gallium arsenide, indium phosphide and gallium arsenide subs trates by atmospheric pressure organo-metallic vapor phase epitaxy. We focused especially on the X-ray analysis of thin layer deformations. The relaxation of the deformation in ZnTe epilayers on InP substrates and ZnSe buffer is abrupt, We observed serious deformation of the thin layers on a GaSb substrate.