GaN is a promising wide-band-gap semiconductor for the production of b
lue and UV emitters. The main problem for the advancement of GaN devic
e technology is the absence of GaN substrates. SiC may be used as a su
bstrate for GaN because of its reasonably low lattice mismatch (simila
r to 3%) and high electrical conductivity. We report here on the prope
rties of GaN layers grown on SiC by metalorganic chemical vapor deposi
tion (MOCVD). The GaN layer thicknesses ranged from 0.5 to 4 mu m, and
the growth rate was similar to 2 mu m h(-1). Surface characteristics,
crystal quality, optical, and electrical properties of GaN layers gro
wn on SiC substrates were investigated. The first GaN light emitters f
ormed on SiC substrates were fabricated.