GROWTH AND CHARACTERIZATION OF GAN LAYERS ON SIC SUBSTRATES

Citation
V. Dmitriev et al., GROWTH AND CHARACTERIZATION OF GAN LAYERS ON SIC SUBSTRATES, Journal of crystal growth, 166(1-4), 1996, pp. 601-606
Citations number
27
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
166
Issue
1-4
Year of publication
1996
Pages
601 - 606
Database
ISI
SICI code
0022-0248(1996)166:1-4<601:GACOGL>2.0.ZU;2-X
Abstract
GaN is a promising wide-band-gap semiconductor for the production of b lue and UV emitters. The main problem for the advancement of GaN devic e technology is the absence of GaN substrates. SiC may be used as a su bstrate for GaN because of its reasonably low lattice mismatch (simila r to 3%) and high electrical conductivity. We report here on the prope rties of GaN layers grown on SiC by metalorganic chemical vapor deposi tion (MOCVD). The GaN layer thicknesses ranged from 0.5 to 4 mu m, and the growth rate was similar to 2 mu m h(-1). Surface characteristics, crystal quality, optical, and electrical properties of GaN layers gro wn on SiC substrates were investigated. The first GaN light emitters f ormed on SiC substrates were fabricated.