GROWTH-CHARACTERISTICS OF (100)HGCDTE LAYERS IN LOW-TEMPERATURE MOVPEWITH DITERTIARYBUTYLTELLURIDE

Low-temperature growth of (100)HgCdTe (MCT) layers in MOVPE has been s tudied using ditertiarybutyltelluride (DtBTe), dimethylcadmium (DMCd), and elementary mercury as precursors. MCT layers were grown at 275 de grees C on (100)GaAs substrates. Growths were carried out in a vertica l growth cell which has a narrow spacing between the substrate and cel l ceiling. Using the growth cell, the Cd-composition (x) of MCT layers was controlled over a wide range from 0 to 0.98 by the DMCd flow. The growth rate of the MCT layers was constant at 5 mu m h(-1) for the in creased DMCd flow. Preferential Cd-incorporation into MCT layers and a n increase of the growth rate were observed in the presence of mercury vapor. The growth characteristics were considered to be due to the al kyl-exchange reaction between DMCd and mercury. The electrical propert ies and crystallinity of grown layers were also evaluated, which showe d that layers with high quality can be grown at 275 degrees C.