GROWTH OF SIXGE1-X CRYSTALS BY THE MICRO-PULLING-DOWN METHOD

Si-rich SixGe1-x micro-single-crystals with a diameter in the range of 300 to 900 mu m were grown by the micro-pulling-down method. Growth w ith constant diameter could be achieved without an automatic diameter control system. Due to the design of the crucible, the transport of so lute and, thus, the effective distribution coefficient k(eff) can be r eproducibly controlled by a variation of the crystal diameter or growt h rate. An adjustment to k(eff) = 1 allows the growth of crystals with constant axial composition, whereas crystals of a desired axial compo sition profile can be grown by appropriate variation of the controllin g parameters.