IN-SITU INVESTIGATION OF OXYGEN DISTRIBUTION AND TRANSPORT IN CZOCHRALSKI SILICON MELTS BY ELECTROCHEMICAL SOLID IONIC SENSORS

Authors
SEIDL A MARTEN R MULLER G
Citation
A. Seidl et al., IN-SITU INVESTIGATION OF OXYGEN DISTRIBUTION AND TRANSPORT IN CZOCHRALSKI SILICON MELTS BY ELECTROCHEMICAL SOLID IONIC SENSORS, Journal of crystal growth, 166(1-4), 1996, pp. 680-684
Citations number
17
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
166
Issue
1-4
Year of publication
1996
Pages
680 - 684
Database
ISI
SICI code
0022-0248(1996)166:1-4<680:IIOODA>2.0.ZU;2-8
Abstract
Electrochemical oxygen sensors were used for the measurement of the ox ygen concentration and distribution in Czochralski silicon melts. Cruc ible rotation was found to have a similar impact on the oxygen mass tr ansport to that already known for heat transport in the melt. Increasi ng crucible rotation reduces the flux from the crucible wall to the me lt surface.