SILICON CRYSTAL-GROWTH USING A LIQUID-FEEDING CZOCHRALSKI METHOD

Authors
SHIRAISHI Y KUROSAKA S IMAI M
Citation
Y. Shiraishi et al., SILICON CRYSTAL-GROWTH USING A LIQUID-FEEDING CZOCHRALSKI METHOD, Journal of crystal growth, 166(1-4), 1996, pp. 685-688
Citations number
7
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
166
Issue
1-4
Year of publication
1996
Pages
685 - 688
Database
ISI
SICI code
0022-0248(1996)166:1-4<685:SCUALC>2.0.ZU;2-X
Abstract
Silicon single crystals with uniformity along the growth direction wer e grown using a new continuous Czochralski (CCZ) method. Polycrystalli ne silicon rods used as charge materials are melted by carbon heaters over a crucible without contact between the raw material and other sub stances. Using this method, silicon crystals with diameters as large a s 6 or 8 inch and good uniformity along the growth direction were grow n.