H. Matsushita et al., THERMAL-ANALYSIS OF THE CHEMICAL-REACTION PROCESS FOR CUGA1-XINXSE2 CRYSTALS, Journal of crystal growth, 166(1-4), 1996, pp. 712-717
We have investigated the chemical-reaction process forming CuGa(1-x)ln
(x)Se(2) phases by differential thermal analysis and powder X-ray diff
raction. In a Cu + In + Se-2 mixture, the CuInSe2 compound is almost c
ompletely formed by exothermic reactions between Cu and In selenides j
ust below the melting point of CuInSe2 after the formation of the Cu-S
e and In-Se phases below 400 degrees C. In a Cu + Ga + Se-2 mixture, t
he CuGaSe2 compound is formed by the exothermic reaction between CuSe2
and Ga at about 900 degrees C, after the formation of the CuSe2 phase
below 380 degrees C. In the CuGa1-xInxSe2 solid solution, the melting
and transition points show a slightly concave decrease with increasin
g composition x. It may be very difficult to lower the number of heter
ogeneous phases, because of the difference in the chemical-reaction pr
ocesses between end-member compounds.