T. Caillat et al., BRIDGMAN-SOLUTION CRYSTAL-GROWTH AND CHARACTERIZATION OF THE SKUTTERUDITE COMPOUNDS COSB3 AND RHSB3, Journal of crystal growth, 166(1-4), 1996, pp. 722-726
Compounds with the skutterudite structure have recently been identifie
d as advanced thermoelectric materials. We report on the crystal growt
h and characterization of the skutterudite compounds CoSb3 and RhSb3 w
hich form peritectically at 873 and 900 degrees C, respectively. Large
single crystals were obtained by the vertical gradient freeze techniq
ue from solutions rich in antimony. The samples were characterized by
high-temperature Hall-effect and electrical resistivity measurements.
Bandgaps of 0.56 and 0.80 eV were estimated from these measurements fo
r CoSb3 and RhSb3, respectively. N-type CoSb3 samples were obtained by
doping with Te. Exceptionally high p-type Hall-mobility values have b
een measured and a room-temperature value of 3445 cm(2) V-1 s(-1) was
obtained for CoSb3 at a carrier concentration of 4 x 10(17) cm(-3) and
8000 cm(2) V-1 s(-1) was obtained for RhSb3 at a carrier concentratio
n of 3.5 x 10(18) cm(-3).