HETEROEPITAXIAL GROWTH OF TIO2 FILMS BY ION-BEAM SPUTTER-DEPOSITION

Heteroepitaxial TiO2 films of the rutile and anatase phases have been grown using the ion-beam sputter deposition technique. The orientation s of the highest-quality rutile films grown and their corresponding su bstrates are (100)/(0001)Al2O3, (101)/(<11(2)over bar 0>)Al2O3, (001)/ (<10(1)over bar 0>)Al2O3, and (110)/(110)MgO. This is the first report of the heteroepitaxial growth of (001)/(<10(1)over bar 0>)Al2O3 and ( 110)/(110)MgO rutile films. Results indicate that the films are aligne d both perpendicular and parallel to the plane of the film. Distinct s urface morphologies are observed for each orientation. The (100) and ( 101) rutile orientations were also grown on (111)MgO and (<1(1)over ba r 02>)Al2O3, respectively. The (100) anatase grew on both (100)MgO and MgAl2O4. The growth mechanisms of several rutile films on Al2O3 subst rates were investigated, and the data suggest island or Volmer-Weber t ype growth.