HIGH-DOSE-RATE HYDROGEN PASSIVATION OF POLYCRYSTALLINE SILICON CMOS TFTS BY PLASMA ION-IMPLANTATION

Plasma ion implantation (PII) hydrogenation is an efficient method for defect passivation in polycrystalline silicon (poly-Si) thin film tra nsistors (TFT's). We have developed a process that can achieve saturat ion of device parameter improvement in 30 min, whereas conventional pl asma hydrogenation takes approximately 4 h. Our model predicts that mu ch shorter process times are possible, We have analyzed the gate oxide charging which occurs during the PII process and controlled it to the extent that processed devices are damage-free, The long-term reliabil ity of PII hydrogenated devices is superior to that of conventional pa rallel-plate plasma hydrogenated devices.