ANALYSIS OF WIDTH EDGE EFFECTS IN ADVANCED ISOLATION SCHEMES FOR DEEP-SUBMICRON CMOS TECHNOLOGIES

The evolution of the active area/isolation transition has resulted in modification of the isolation induced parasitic effects on the device, Based on experimental and simulation results, this paper presents an analysis of the corner parasitic effects induced by an abrupt transiti on, The substrate bias, transistor length and width dependence of the corner effect is studied. It is shown that the corner parasitic transi stor is less sensitive to short channel and substrate bias effects, Th e parasitic effect behavior as a function of certain technological par ameters is studied by simulating the isolation process, It is demonstr ated that certain technological parameters linked to the isolation pro cess must be perfectly controlled for a good integration of future iso lation technologies, especially for shallow trench isolation (STI).