A NOVEL TECHNIQUE OF N2O-TREATMENT ON NH3-NITRIDED OXIDE AS GATE DIELECTRIC FOR NMOS TRANSISTORS

A novel technique of N2O treatment on NH3-nitrided oxide is used to pr epare thin gate oxde. Experiments on MOS capacitors and nMOSFET's with this kind of gate dielectric show that N2O treatment is superior to c onventional reoxidation step in suppressing both electron and hole tra ppings and interface trap creation under high-field stress. Interface hardness against hot-carrier bombardment and neutral electron trap gen eration are also improved. Thus, N2O treatment on NH3-nitrided oxide s hows excellent electrical and reliability properties, while maintainin g sufficiently high nitrogen concentration in gate oxide which offers good resistance to dopant penetration.