THE FABRICATION AND CHARACTERIZATION OF EEPROM ARRAYS ON GLASS USING A LOW-TEMPERATURE POLY-SI TFT PROCESS

Authors
YOUNG ND HARKIN G BUNN RM MCCULLOCH DJ FRENCH DJ
Citation
Nd. Young et al., THE FABRICATION AND CHARACTERIZATION OF EEPROM ARRAYS ON GLASS USING A LOW-TEMPERATURE POLY-SI TFT PROCESS, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1930-1936
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
11
Year of publication
1996
Pages
1930 - 1936
Database
ISI
SICI code
0018-9383(1996)43:11<1930:TFACOE>2.0.ZU;2-X
Abstract
The fabrication and optimization of poly-Si thin-film transistors and memory devices on glass substrates at temperatures of 200 degrees C-40 0 degrees C is described, and the device characteristics and stability are discussed, The devices were formed using PECVD amorphous silicon, silicon dioxide, and silicon nitride films, and the crystallization o f the amorphous silicon was achieved with an excimer laser, The perfor mance of 16 x 16 EEPROM arrays with integrated drive circuits formed u sing this technology is presented.