A SELF-CONVERGENCE ERASE FOR NOR FLASH EEPROM USING AVALANCHE HOT-CARRIER INJECTION

A new erasing method for simple stacked gate NOR Flash EEPROM's is pro posed and is applied to 2 M bit NOR Flash test array using 0.6 mu m CM OS technology. Due to avalanche hot carrier injection after erasure by Fowler-Nordheim (F-N) tunneling current, the threshold voltages conve rge to a Tunnel certain steady state. The steady state is a point of b alance between oxide the avalanche hot electron injection and the aval anche hot hole injection into the floating gate, and can be controlled easily by the channel doping and the applying control-gate voltage du ring convergence operation, The erasing method eliminates the problem of over-erased cells and realizes highly stable flash memory erasure.