THERMAL NOISE MODELING FOR SHORT-CHANNEL MOSFETS

An analytical formulation of the thermal noise in short-channel MOSFET 's, working in the saturation region, is presented, For the noise calc ulation, we took into account effects like the held dependent noise te mperature and mobility, the device geometry and the channel length mod ulation, the back gate effect and the velocity saturation, The derived data from the model are in good agreement with reported thermal noise measurements, regarding the noise bias dependence, for transistors wi th channel lengths shorter than 1 mu m. Since the present thermal nois e models of MOS transistors are valid for channel lengths well above 1 mu m, the proposed model can be easily incorporated in circuit simula tors like SPICE, providing an extension to the analytical thermal nois e modeling suitable for submicron MOSFET's.