A SINGLE-TRANSISTOR SILICON SYNAPSE

Citation
C. Diorio et al., A SINGLE-TRANSISTOR SILICON SYNAPSE, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1972-1980
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189383
Volume
43
Issue
11
Year of publication
1996
Pages
1972 - 1980
Database
ISI
SICI code
0018-9383(1996)43:11<1972:ASSS>2.0.ZU;2-#
Abstract
We have developed a new floating-gate silicon MOS transistor for analo g learning applications, The memory storage is nonvolatile; hot-electr on injection and electron tunneling permit bidirectional memory update s, Because these updates depend on both the stored memory value and th e transistor terminal voltages, the synapse can implement a learning f unction, We have derived a memory-update rule from the physics of the tunneling and injection processes, and have investigated synapse learn ing in a prototype array, Unlike conventional EEPROM devices, the syna pse allows simultaneous memory reading and writing, Synapse transistor arrays can therefore compute both the array output, and local memory updates, in parallel, The synapse is small, and typically is operated at subthreshold current levels; it will permit the development of dens e, low-power silicon learning systems.