A MODEL FOR MOBILITY DEGRADATION IN HIGHLY DOPED ARSENIC LAYERS

Authors
ROUSSEAU PM GRIFFIN PB LUNING S PLUMMER JD
Citation
Pm. Rousseau et al., A MODEL FOR MOBILITY DEGRADATION IN HIGHLY DOPED ARSENIC LAYERS, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 2025-2027
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
11
Year of publication
1996
Pages
2025 - 2027
Database
ISI
SICI code
0018-9383(1996)43:11<2025:AMFMDI>2.0.ZU;2-#
Abstract
As arsenic doping concentration increases past the electrical solubili ty limit, a significant fraction of the arsenic become electrically in active. This inactive arsenic results in an electron mobility degradat ion. Using Laser melt annealing and subsequent deactivation anneals, m obility was studied as a function of active and inactive dose. A model is presented for this effect based on the theory of scattering by neu tral defects. Using the model, it is possible to extract active concen tration profiles from resistive measurements.