COMPARISONS AND EXTENSION OF RECENT SURFACE-POTENTIAL MODELS FOR FULLY DEPLETED SHORT-CHANNEL SOI MOSFETS

Authors
NIU GF CHEN RMM RUAN G
Citation
Gf. Niu et al., COMPARISONS AND EXTENSION OF RECENT SURFACE-POTENTIAL MODELS FOR FULLY DEPLETED SHORT-CHANNEL SOI MOSFETS, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 2034-2037
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
11
Year of publication
1996
Pages
2034 - 2037
Database
ISI
SICI code
0018-9383(1996)43:11<2034:CAEORS>2.0.ZU;2-J
Abstract
Recent surface potential models published in this TRANSACTIONS for ful ly depleted short-channel SOI MOSFET's are compared. The parabolic pot ential approach is clarified to be a special case of the quasi-2-D app roach. An extended quasi-2-D model is also derived.