Solder-based die-attach processes used to affix GaAs devices to heat s
preading carriers were investigated. The microstructures of the solder
materials were assessed, with a focus on void formation, and the resp
onse of the solder and backsurface metallization and carrier plating t
o the temperature cycles of die attachment and reflow processes. Voide
d regions were found in all solder joints, with a dramatic sensitivity
to temperature cycles. Gold-tin alloy phases were found to dominate t
he microstructure of the solder for all configurations evaluated. The
total thermal budget was a critical issue in the formation and transfo
rmation of various phases, as expected for low melting point alloys. N
iVAu and TiPtAu backmetal systems were investigated to determine their
suitability for die attachment.