Metallization of high-T-c superconductors using low resistivity metal
oxides and Cu-Ge alloys has been investigated on high quality pulsed l
aser deposited epitaxial YBa2Cu3O7-x (YBCO) films. Epitaxial LaNiO3 (L
NO) thin films have been grown on YBCO films at 700 degrees C using pu
lsed laser deposition. The specific resistivity of LNO was measured to
be 50 mu Omega-cm at 300K which decreases to 19 mu Omega-cm at 100K i
ndicating good metallicity of the LNO films. The contact resistance of
LNO-YBCO thin film interface was found to be reasonably low (of the o
rder of 10(-4)Omega-cm(2) at 77K) which suggests that the interface fo
rmed between the two films is quite clean and LNO can emerge as a prom
ising metal electrode-material to YBCO films. A preliminary investigat
ion related to the compatibility of Cu3Ge alloy as a contact metalliza
tion material to YBCO films is discussed. The usage of other oxide bas
ed low resistivity materials such as SrRuO3 (SRO) and SrVO3 (SVO) for
metallization of high-T-c YBCO superconductor films is also discussed.