TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROMETRY (TOF-SIMS)

Citation
P. Bertrand et Lt. Weng, TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROMETRY (TOF-SIMS), Mikrochimica acta, 1996, pp. 167-182
Citations number
43
Categorie Soggetti
Chemistry Analytical
Journal title
ISSN journal
00263672
Year of publication
1996
Supplement
13
Pages
167 - 182
Database
ISI
SICI code
0026-3672(1996):<167:TSM(>2.0.ZU;2-1
Abstract
Secondary ion mass spectrometry in the ''static mode'' is becoming a k ey technique for the surface characterization of organic materials. Th is is due to the very specific chemical information derived from chara cteristic molecular secondary ions. The present expansion of this tech nique is related to the development of high performance time-of-flight mass spectrometers. Indeed they combine high mass resolution allowing to resolve mass interferences between isobaric molecular secondary io ns, unlimited mass range, high transmission allowing to reduce the tot al ion fluence per spectrum (<10(12) ions/cm(2)) and the molecular ima ging capabilities in microscope and/or microprobe modes. The aim of th is paper is to present a general view on the basic principles and expe rimental developments of ToF-SIMS. The present understanding of the se condary molecular ion formation mechanisms in organic materials (polym ers) will be reviewed and illustrated. Different applications coming m ainly from our recent work will be treated with special emphasis on im aging. They concern surface composition and morphology of polymer blen ds, contamination and additives at polymer surfaces, plasma treated po lymer surfaces and carbon fibers in polymer matrix.