MEASUREMENTS OF GA1-XALXAS LAYERS ON GAAS WITH EDS

GaA1As is a basic material in semiconductor technology and thus of gre at interest for industrial research. Several Ga1-xAlxAs bulk samples o f predefined composition as well as layered samples of well defined th icknesses and composition were investigated. The experimental data are analyzed with a computer program, which has been developed at the Ins titute for Applied and Technical Physics at the Technical University o f Vienna. Furthermore, analysis of the bulk samples using the program PAP of Pouchou and Pichoir is carried out. An excellent agreement of b oth correction procedures with the defined composition values is obtai ned. The determined layer thicknesses also correspond well with the de fined data. For our calculations the total K-peak of aluminum and the total L-peak of gallium and arsenic were measured. Reducing the L-inte nsities by the already published relative intensity factor for L alpha radiation leads to less correspondence of the calculated k-ratios com pared to the measured values. By additionally regarding the emerging L beta intensities with partly much higher mass absorption coefficients than the corresponding values for L alpha radiation a dramatic improv ement is achieved.