HIGH-TEMPERATURE DEFECT EQUILIBRIA IN CU-DOPED CDTE

Authors
FOCHUK PM PANCHUK OE KOCHERGAN VI YATSUNIK LA
Citation
Pm. Fochuk et al., HIGH-TEMPERATURE DEFECT EQUILIBRIA IN CU-DOPED CDTE, Inorganic materials, 32(11), 1996, pp. 1187-1189
Citations number
19
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
32
Issue
11
Year of publication
1996
Pages
1187 - 1189
Database
ISI
SICI code
0020-1685(1996)32:11<1187:HDEICC>2.0.ZU;2-5
Abstract
The high-temperature electrical properties of CdTe doped with copper t o concentrations C-Cu = (1-100) x 10(17) cm(-3) suggest that the (Cu'C u-Cd(i).)(x) complexes are dominant Cu-related defects.