The structure and properties of metal borides are discussed, and the p
rincipal preparation techniques are examined. It is shown that impurit
ies can be effectively removed from transition-metal diborides by are
remelting without significant changes in stoichiometry. Electrical cha
racteristics, microhardness anisotropy, and elastic modulus anisotropy
are measured on high-purity single crystals of titanium and niobium b
orides. It is demonstrated that transition-metal diborides are promisi
ng materials for electronic applications.