CMOS FOUNDRY IMPLEMENTATION OF SCHOTTKY DIODES FOR RF DETECTION

Schottky diodes for RF power measurement were designed and fabricated using a commercial n-well CMOS foundry process through the MOSIS(1) se rvice. The Schottky diodes are implemented by modifying the SCMOS tech nology file of the public-domain graphics layout editor, MAGIC, or by explicitly implementing the appropriate CIF layers, The modifications allow direct contact of first-layer metal to the low-doped substrate, Current-voltage measurements showed that only the n-type devices had r ectifying properties with a barrier height of 0.78 eV. The I-V results were verified by performing capacitance-voltage measurements on diode s of different contact-areas. The diodes were tested in an RF detector circuit, The cut off frequency of the detector was shown to be 600 MH z.