ANALYSIS OF CONDUCTIVITY DEGRADATION IN GOLD PLATINUM-DOPED SILICON/

Authors
VALDINOCI M COLALONGO L PELLEGRINI A RUDAN M
Citation
M. Valdinoci et al., ANALYSIS OF CONDUCTIVITY DEGRADATION IN GOLD PLATINUM-DOPED SILICON/, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2269-2275
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
12
Year of publication
1996
Pages
2269 - 2275
Database
ISI
SICI code
0018-9383(1996)43:12<2269:AOCDIG>2.0.ZU;2-3
Abstract
A general model is presented, describing the effects of gold/platinum doping in silicon. The steady-state case is then analyzed with referen ce to the conductivity degradation due to deep impurities in realistic cases of n- and p-type materials. In particular, the different influe nce of gold with respect to platinum in n-type material, due to the lo calization in energy of the two acceptor levels, is quantitatively exp lained and reproduced.