2.5 KV-100 A FLAT-PACKAGED IGBT (MICRO-STACK IGBT)

A 2.5 kV-100 A flat-packaged IGBT (micro-stack IGBT) has been develope d, This is the first work to demonstrate the possibility of a high-vol tage, high-current, and highly reliable hat-packaged MOS controlled de vice, The 20-mm square chip is press-contacted with an emitter electro de having four rectangular p-base regions on which the MOS gate is not arranged, The great advantage of this structure is the double side co oling and the emitter wire bondingless, The micro-stack IGBT shows the high-blocking voltage of 2.5 kV, the typical on-state voltage of 3.5 V at the collector current I-c = 100 A, the turn-off capability of 8 x I-c, and the good pressure contact for the electrical and thermal cha racteristics in the range from 2 to 8 kN/chip.