J. Crofton et S. Sriram, REVERSE LEAKAGE CURRENT CALCULATIONS FOR SIC SCHOTTKY CONTACTS, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2305-2307
Reverse leakage current calculations as a function of Schottky barrier
height and temperature have been performed for metal gates on n-type
6H-SiC. These calculations were performed using a WKB evaluation of th
e tunneling probability through a reverse biased Schottky barrier and
numerically integrating over all energies to find the reverse current
density. This method is shown to yield much better agreement with prev
iously published reverse leakage currents on 6H-SiC than can be obtain
ed using thermionic emission theory.