THRESHOLD VOLTAGE MODEL FOR DEEP-SUBMICROMETER MOSFETS AND ITS EXTENSION TO SUBTHRESHOLD OPERATION - FURTHER COMMENTS

Authors
NIU GF RUAN G CHEN RMM
Citation
Gf. Niu et al., THRESHOLD VOLTAGE MODEL FOR DEEP-SUBMICROMETER MOSFETS AND ITS EXTENSION TO SUBTHRESHOLD OPERATION - FURTHER COMMENTS, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2311-2312
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
12
Year of publication
1996
Pages
2311 - 2312
Database
ISI
SICI code
0018-9383(1996)43:12<2311:TVMFDM>2.0.ZU;2-U
Abstract
This correspondence extends Iniguez's results [1] to give a threshold voltage expression with higher computational efficiency, and extends t he surface potential model at threshold voltage [2] to subthreshold op eration.