SILICON-CARBIDE MOSFET TECHNOLOGY

The research and development activities carried out to demonstrate the status of MOS planar technology for the manufacture of high temperatu re SiC ICs will be described. These activities resulted in the design, fabrication and demonstration of the world's first SiC analog IC-a mo nolithic MOSFET operational amplifier. Research tasks required for the development of a planar SiC MOSFET IC technology included: characteri zation of the SiC-SiO2 interface using thermally grown oxides; high te mperature (350 degrees C) reliability studies of thermally grown oxide s; ion implantation studies of donor (N) and acceptor (B) dopants to f orm junction diodes; epitaxial layer characterization; device isolatio n methods; and finally integrated circuit design, fabrication and test ing of the world's first monolithic SiC operational amplifier IC. High temperature circuit drift instabilities at 350 degrees C were charact erized. These studies defined an SiC depletion model MOSFET IC technol ogy and outlined tasks required to improve all types of SiC devices. C opyright (C) 1996 Elsevier Science Ltd