ANALYTICAL INVESTIGATION OF ELECTRICAL PERFORMANCE OF METAL-INSULATOR-III-V SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

A two-dimensional analytical model for the drain current characteristi cs and related properties of an n-channel MISFET is developed. Taking the carrier diffusion and velocity saturation in the channel into acco unt, the current resulting from applied drain and gate biases is model ed. The model is used to calculate the electrical properties of GaAs a nd InGaAs MISFETs. For both of these MISFETs Si3N4 is used as an insul ator layer. In order to highlight the advantages of III-V semiconducto r MISFETs over Si MOSFETs theoretical results are also obtained for Si MOSFETs. For these MOSFETs SiO2 is used as an oxide layer. The calcul ated results strongly demonstrate the superiority of InGaAs and GaAs M ISFETs over Si MOSFETs. Copyright (C) 1996 Published by Elsevier Scien ce Ltd