NUMERICAL AND EXPERIMENTAL-ANALYSIS OF THE STATIC CHARACTERISTICS ANDNOISE IN UNGATED RECESSED MESFET STRUCTURES

We present an analysis of the static characteristics and noise in GaAs ungated recessed MESFET structures with different values of recess le ngth according to Monte Carlo simulation and experimental measurements . In order to fit results obtained from Monte Carlo simulation with th ose of measurements of the static I-V characteristic and high frequenc y noise in real devices, several real effects have been introduced in the simulated structures. A good agreement has been found. Two interes ting effects have been studied: first, the surface potential, which co ntrols current how through the channel, and second, the presence of hi gh fields under the recess, causing the appearance of hot electrons. W e analyze these effects on the I-V curves and the noise of the devices , trying to detect the influence of ballistic transport when decreasin g the recess length. Copyright (C) 1996 Elsevier Science Ltd