THE RADIO-FREQUENCY HOLLOW-CATHODE PLASMA-JET ARC FOR THE FILM DEPOSITION

The radio frequency hollow cathode plasma jet (RPJ or RHCPJ) are disch arge is studied for an activated reactive deposition of TiN films. The presence of low content of nitrogen in argon enables reaching the are regime at lower powers than in pure argon. The transition into the di stributed are after admission of low content of nitrogen results in an extreme enhancement of TiN deposition rate (20-30x higher than for Ti ) and at the same time in an effective incorporation of nitrogen into the film. The spontaneously repeated transitions between the hollow ca thode discharge and RHCPJ are at particular parameters are studied. Th e time development and the character of these transitions confirm the substantial role of metastable argon atoms in the discharge. The compa rison of several cathode materials is presented. The reactive depositi on of TiN films at low nitrogen pressure without argon is examined. (C ) 1996 American Vacuum Society.