SCHIFF-BASE PRECURSOR COMPOUNDS FOR THE CHEMICAL BEAM EPITAXY OF OXIDE THIN-FILMS .1. DEPOSITION OF CUO ON MGO[001] USING COPPER(II) BIS(BENZOYLACETONE)-ETHYLENDIIMINE

Authors
FRITSCH E MACHLER E ARROUY F BERKE H POVEY I WILLMOTT PR LOCQUET JP
Citation
E. Fritsch et al., SCHIFF-BASE PRECURSOR COMPOUNDS FOR THE CHEMICAL BEAM EPITAXY OF OXIDE THIN-FILMS .1. DEPOSITION OF CUO ON MGO[001] USING COPPER(II) BIS(BENZOYLACETONE)-ETHYLENDIIMINE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3208-3213
Citations number
25
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
14
Issue
6
Year of publication
1996
Pages
3208 - 3213
Database
ISI
SICI code
0734-2101(1996)14:6<3208:SPCFTC>2.0.ZU;2-B
Abstract
A new precursor compound for the deposition of copper oxide thin films under molecular beam conditio us, copper bis(benzoylacetone)-ethylene diimine, has been characterized by thermal analysis and in situ mass s pectrometry. Its stability and decomposition behavior are reported as well as its use for the deposition of epitaxial cooper oxide thin film s on MgO. (C) 1996 American Vacuum Society.