MOLECULAR-BEAM EPITAXY GROWTH OF CDTE ON (211)A GAAS

CdTe has been grown on (211)A GaAs for the first time in the growth te mperature range of 240-310 degrees C by molecular beam epitaxy. The qu ality and characteristics of the epitaxial film were studied by photol uminescence spectra, an x-ray double crystal rocking curve, a Nomarski interference microscope, add etching. High quality CdTe films were ob tained. For our best film the full width at half maximum of the x-ray double crystal rocking curve was 126 arcsecond, and that of photolumin escence at 77 K was 8.9 meV. The epilayer was always (211)A CdTe with a tilted angle of about 2 degrees around CdTe[0(1) over bar1$]parallel to GaAs[0(1) over bar1$] with respect to the substrate. A model of th e initial growth stage of CdTe on (211)A GaAs is presented. (C) 1996 A merican Vacuum Society.