COMPARISON BETWEEN PREDICTED STRAIN VALUES USING ELASTIC THEORY AND EXPERIMENTAL STRAIN VALUES FOR SIGEC ALLOY-FILMS GROWN ON SI(001)

Authors
SEGO S CULBERTSON RJ BAIR AE ALFORD TL
Citation
S. Sego et al., COMPARISON BETWEEN PREDICTED STRAIN VALUES USING ELASTIC THEORY AND EXPERIMENTAL STRAIN VALUES FOR SIGEC ALLOY-FILMS GROWN ON SI(001), Materials chemistry and physics, 46(2-3), 1996, pp. 277-282
Citations number
19
Categorie Soggetti
Material Science
Journal title
Materials chemistry and physics → ACNP
ISSN journal
02540584
Volume
46
Issue
2-3
Year of publication
1996
Pages
277 - 282
Database
ISI
SICI code
0254-0584(1996)46:2-3<277:CBPSVU>2.0.ZU;2-#
Abstract
The strain in epitaxial SiGeC alloy films grown on Si(001) substrates by chemical vapor deposition (CVD) is quantified. Film composition was determined by Rutherford backscattering spectrometry (RBS) and nuclea r resonance analysis. The amount of substitutional C was determined by He ion channeling near a C-resonance energy. Ion channeling angular s cans and X-ray diffraction space maps were used to determine the strai n in the alloys. Good agreement was found between the measured values of strain and predictions based on a simple elastic theory and Vegard' s law.