REFLECTANCE MODELING FOR IN-SITU DRY ETCH MONITORING OF BULK SIO2 ANDIII-V MULTILAYER STRUCTURES

Authors
HICKS SE PARKES W WILKINSON JAH WILKINSON CDW
Citation
Se. Hicks et al., REFLECTANCE MODELING FOR IN-SITU DRY ETCH MONITORING OF BULK SIO2 ANDIII-V MULTILAYER STRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3306-3310
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
6
Year of publication
1994
Pages
3306 - 3310
Database
ISI
SICI code
1071-1023(1994)12:6<3306:RMFIDE>2.0.ZU;2-J