EFFECTS OF ETCH CHEMISTRY ON SF6-BASED TUNGSTEN ETCHING BY ELECTRON-CYCLOTRON-RESONANCE REACTIVE ION ETCHING

Authors
EDDY CR KOSAKOWSKI J SHIREY LM DOBISZ EA RHEE KW CHU W FOSTER KW MARRIAN CRK PECKERAR MC
Citation
Cr. Eddy et al., EFFECTS OF ETCH CHEMISTRY ON SF6-BASED TUNGSTEN ETCHING BY ELECTRON-CYCLOTRON-RESONANCE REACTIVE ION ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3351-3355
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
6
Year of publication
1994
Pages
3351 - 3355
Database
ISI
SICI code
1071-1023(1994)12:6<3351:EOECOS>2.0.ZU;2-J