SILICON POINT CONTACTS - NANOFABRICATION, MOLECULAR-BEAM EPITAXIAL-GROWTH, AND TRANSPORT MEASUREMENTS

Authors
MAES JWH CARO J WERNER K RADELAAR S KOZUB VI ZANDBERGEN HW
Citation
Jwh. Maes et al., SILICON POINT CONTACTS - NANOFABRICATION, MOLECULAR-BEAM EPITAXIAL-GROWTH, AND TRANSPORT MEASUREMENTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3614-3618
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
12
Issue
6
Year of publication
1994
Pages
3614 - 3618
Database
ISI
SICI code
1071-1023(1994)12:6<3614:SPC-NM>2.0.ZU;2-V