HIGH-PERFORMANCE SELF-ALIGNED SUB-100 NM METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING X-RAY-LITHOGRAPHY

YANG IY HU H SU LT WONG VV BURKHARDT M MOON EE CARTER JM ANTONIADIS DA SMITH HI RHEE KW CHU W

Iy. Yang et al., HIGH-PERFORMANCE SELF-ALIGNED SUB-100 NM METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING X-RAY-LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 4051-4054

13

Physics, Applied

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP

10711023

12

6

1994

4051 - 4054

ISI

1071-1023(1994)12:6<4051:HSSNMF>2.0.ZU;2-Z