FOCUSED-ION-BEAM IMPLANTATION OF GA IN ELEMENTAL AND COMPOUND SEMICONDUCTORS

Authors
GNASER H KALLMAYER C OECHSNER H
Citation
H. Gnaser et al., FOCUSED-ION-BEAM IMPLANTATION OF GA IN ELEMENTAL AND COMPOUND SEMICONDUCTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(1), 1995, pp. 19-26
Citations number
34
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
1
Year of publication
1995
Pages
19 - 26
Database
ISI
SICI code
1071-1023(1995)13:1<19:FIOGIE>2.0.ZU;2-F