PLASMA-INDUCED DAMAGE OF GAAS PN-JUNCTION DIODES USING ELECTRON-CYCLOTRON-RESONANCE GENERATED CL-2 AR, BCL3/AR, CL-2/BCL3/AR, AND SICL4/AR PLASMAS/

Authors
SHUL RJ LOVEJOY ML HETHERINGTON DL RIEGER DJ KLEM JF MELLOCH MR
Citation
Rj. Shul et al., PLASMA-INDUCED DAMAGE OF GAAS PN-JUNCTION DIODES USING ELECTRON-CYCLOTRON-RESONANCE GENERATED CL-2 AR, BCL3/AR, CL-2/BCL3/AR, AND SICL4/AR PLASMAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(1), 1995, pp. 27-33
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
1
Year of publication
1995
Pages
27 - 33
Database
ISI
SICI code
1071-1023(1995)13:1<27:PDOGPD>2.0.ZU;2-F