SCALING OF SI AND GAAS TRENCH ETCH RATES WITH ASPECT RATIO, FEATURE WIDTH, AND SUBSTRATE-TEMPERATURE

Authors
BAILEY AD VANDESANDEN MCM GREGUS JA GOTTSCHO RA
Citation
Ad. Bailey et al., SCALING OF SI AND GAAS TRENCH ETCH RATES WITH ASPECT RATIO, FEATURE WIDTH, AND SUBSTRATE-TEMPERATURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(1), 1995, pp. 92-104
Citations number
82
Categorie Soggetti
Physics, Applied
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
1
Year of publication
1995
Pages
92 - 104
Database
ISI
SICI code
1071-1023(1995)13:1<92:SOSAGT>2.0.ZU;2-C