HOT-CARRIER EFFECT - MODEL, MECHANISM AND EFFECTS ON C-V AND I-V CHARACTERISTICS IN MOS STRUCTURES

Authors
ZHAO CZ ZHANG DS SHI BH
Citation
Cz. Zhao et al., HOT-CARRIER EFFECT - MODEL, MECHANISM AND EFFECTS ON C-V AND I-V CHARACTERISTICS IN MOS STRUCTURES, Microelectronics and reliability, 36(4), 1996, pp. 493-496
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
36
Issue
4
Year of publication
1996
Pages
493 - 496
Database
ISI
SICI code
0026-2714(1996)36:4<493:HE-MMA>2.0.ZU;2-0
Abstract
The effects of hot carrier injection on C-V and I-V characteristics in MOS structures are discussed. The charge trapping and generation of i nterface states caused by the hot carrier effect lead to C-V character istic curve distortion, flatband voltage shift and, under a constant v oltage, SiO2 leakage current shift with time. The mechanisms of these shifts are dealt with. The t(n) physical models of shifts are put forw ard. The phenomenon observed in experiments is well explained.