NON-STEADY-STATE PHOTOELECTROMOTIVE-FORCE BASED GAAS ADAPTIVE PHOTODETECTORS AT 632.8 NM

Authors
KORNEEV N RODRIGUEZ P SANCHEZ B STEPANOV S
Citation
N. Korneev et al., NON-STEADY-STATE PHOTOELECTROMOTIVE-FORCE BASED GAAS ADAPTIVE PHOTODETECTORS AT 632.8 NM, Optik, 102(1), 1996, pp. 21-23
Citations number
5
Categorie Soggetti
Optics
Journal title
Optik → ACNP
ISSN journal
00304026
Volume
102
Issue
1
Year of publication
1996
Pages
21 - 23
Database
ISI
SICI code
0030-4026(1996)102:1<21:NPBGAP>2.0.ZU;2-E
Abstract
The threshold sensitivity of non-steady-slate photoelectromotive-force based GaAs adaptive photodetector was measured at 632.8 nm. The minim al experimentally detected sinusoidal phase modulation amplitude was a pproximate to 1.6 x 10(-6) rad root mW/Hz that allowed detection of ap proximate to 1.6 x 10(-7) mu m vibration amplitudes with 1 mW laser ir radiation in 1 Hz bandwidth.