STRAIN-MEASUREMENTS OF SIGEC HETEROEPITAXIAL LAYERS ON SI(001) USING ION-BEAM ANALYSIS

The strain in SiGeC heteroepitaxial films grown on Si(001) substrates by chemical vapor deposition is quantified using ion channeling. Ruthe rford backscattering spectrometry was used to quantify the Ge concentr ation as well as the film thickness, nuclear resonance elastic ion sca ttering was used to quantify the C concentration, and ion channeling w as utilized to measure film quality and C substitutionality. Channelin g angular scans across an off-normal major axis were used to quantify the strain. The results confirm that addition of C compensates for the strain introduced by Ge. (C) 1996 American Vacuum Society.