EFFECTS OF SURFACE OXIDE ON THE RAPID THERMAL NITRIDATION OF SI(001)

Authors
COPEL M TROMP RM TIMME HJ PENNER K NAKAO T
Citation
M. Copel et al., EFFECTS OF SURFACE OXIDE ON THE RAPID THERMAL NITRIDATION OF SI(001), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(2), 1996, pp. 462-464
Citations number
11
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
14
Issue
2
Year of publication
1996
Pages
462 - 464
Database
ISI
SICI code
0734-2101(1996)14:2<462:EOSOOT>2.0.ZU;2-6
Abstract
We have investigated the role of surface oxygen on the rapid thermal n itridation of Si(001) by NH3 using medium energy ion scattering. For s hort times, typical of rapid thermal processing, monolayer quantities of oxygen are sufficient to reduce nitridation. The oxide remains on t he surface after nitridation, which may adversely influence subsequent nitride chemical vapor deposition. (C) 1996 American Vacuum Society.