SYNTHESIS OF SILICON-NITRIDE PARTICLES IN PULSED RADIO-FREQUENCY PLASMAS

Silicon nitride (hydrogenated) particles are synthesized using a pulse d 13.56 MHz glow discharge. The plasma is modulated with a square-wave on/off cycle of varying period to study the growth kinetics. In situ laser light scattering and ex sial particle analysis are used to study the nucleation and growth. For SiH4/Ar and SiH4/NH3 plasmas, an initi al very rapid growth phase is followed by slower growth, approaching t he rate of thin film deposition on adjacent flat surfaces. The average particle size can be controlled in the 10-100 nm range by adjusting t he plasma-on time. The size dispersion of the particles is large and i s consistent with a process of continuous nucleation during the plasma -on period. The large polydispersity is also reported for silicon part icles from silane and differs from that reported in other laboratories . The silicon nitride particle morphology is compared to that of silic on and silicon carbide particles generated by the same technique. Wher eas Si particles appear as rough clusters of smaller subunits, the SiC particles are smooth spheres, and the Si3N4 particles are smooth but nonspherical. Postplasma oxidation kinetics of the particles are studi ed with Fourier transform infrared spectra and are consistent with a h ydrolysis mechanism proposed in earlier work with continuous plasmas. Heat treatment of the powder in an ammonia atmosphere results in the e limination of hydrogen, rendering the silicon nitride resistant to atm ospheric oxidation. (C) 1996 American Vacuum Society.