Sm. Collins et al., PARTICLE TRAPPING, TRANSPORT, AND CHARGE IN CAPACITIVELY AND INDUCTIVELY-COUPLED ARGON PLASMAS IN A GASEOUS-ELECTRONICS-CONFERENCE-REFERENCE-CELL, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(2), 1996, pp. 634-638
Citations number
10
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Particle trapping has been observed for both a capacitively coupled an
d an inductively coupled Gaseous Electronics Conference Reference Cell
. Particles in the system were formed by introducing 10% CCl2F2 into a
n argon discharge for 5-10 min and sputtering the resulting film durin
g argon-only experiments. The particles generated were 200-600 nm in d
iameter. Particle transport was observed in the postplasma regime for
both capacitively and inductively coupled cases. For the capacitively
coupled plasma, particles of positive, negative and neutral charge wer
e found during the postplasma and shown to be affected by the presence
of a de field during the postplasma period. The charge on these parti
cles was determined to be between 1.4 and 12.4 electron charges based
on a study of particle motion. This compares to a theoretical value of
800-2600 while the plasma is ignited. For the inductively coupled pla
sma both a low density mode and a high density mode were observed, bei
ng distinguished by a sudden increase in the emission from the plasma
as rf power to the inductive coil was increased. In the high density m
ode of the inductively coupled plasma, the particle cloud was observed
to reside less than a millimeter from the powered electrode as the hi
gh density plasma mode was established. This was distinguished from a
trap height of 4-7 mm for the capacitively coupled plasma which corres
ponds to the sheath thickness. (C) 1996 American Vacuum Society.